用于多频段通信应用的 KKa 波段频率可重构 GaN LNA（英）

A K/Ka-Band Frequency Reconfigurable GaN LNA for Multi-Band Communication ApplicationsDingyuan Zeng, Haoshen Zhu, Outong Gao, Zongqi Cai, Wenquan Che, Quan XueCitation: Dingyuan Zeng, Haoshen Zhu, Outong Gao, Zongqi Cai, Wenquan Che, Quan Xue, A K/Ka-Band FrequencyReconfigurable GaN LNA for Multi-Band Communication Applications, Chinese Journal of Electronics, 2025, 34(3), 739-748. doi:10.23919/cje.2024.00.149.View online: https://doi.org/10.23919/cje.2024.00.149Related articles that may interest youCharacteristic Mode Design of Dual-Band Reconfigurable Frequency Selective SurfaceChinese Journal of Electronics. 2022, 31(6), 1129-1137 https://doi.org/10.1049/cje.2022.00.242Research on a Ka-Band MEMS Power Sensor Investigated with an MEMS Cantilever BeamChinese Journal of Electronics. 2020, 29(2), 378-384 https://doi.org/10.1049/cje.2020.02.002An Ultra-wideband Doubler Chain with 43–65 dBc Fundamental Rejection in Ku/K/Ka BandChinese Journal of Electronics. 2024, 33(5), 1204-1217 https://doi.org/10.23919/cje.2023.00.157Research on Silicon-Based Terahertz Communication Integrated CircuitsChinese Journal of Electronics. 2022, 31(3), 516-533 https://doi.org/10.1049/cje.2021.00.253High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-reflection DesignChinese Journal of Electronics. 2024, 33(5), 1196-1203 https://doi.org/10.23919/cje.2023.00.179On-Chip Reconfigurable Microwave Photonic ProcessorChinese Journal of Electronics. 2023, 32(2), 334-342 https://doi.org/10.23919/cje.2020.00.273Follow CJE WeChat public account for more information RESEARCH ARTICLEA K/Ka-Band Frequency Reconfigurable GaN LNAfor Multi-Band Communication ApplicationsDingyuan Zeng1,2, Haoshen Zhu1,2, Outong Gao1,2, Zongqi Cai3, Wenquan Che1,2,and Quan Xue1,21. Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, School of Electronic and InformationEngineering, South China University of Technology, Guangzhou 510641, China2. Guangdong-Hong Kong-Macao Joint Laboratory for Millimeter-Wave and Terahertz, School of Electronic andInformation Engineering, South China University of Technology, Guangzhou 510641, China3. Department of National Key Laboratory of Science and Technology on Reliability Physics and Application ofElectronic Component, China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou 510610, China Corresponding author: Haoshen Zhu, Email: zhuhs@scut.edu.cnManuscript Received June 6, 2024; Accepted December 4, 2024; Published Online March 27, 2025Copyright © 2025 Chinese Institute of ElectronicsAbstract — A frequency reconfigurable low noise amplifier (LNA) in a 0.15-μm gallium nitride (GaN) high-electron-mobility-transistor process is presented. The concept of frequency reconfiguration utilizing a switch-based reconfig-urable resonator (SBRR) to adjust the resonant frequency and introduce a transmission zero in the lower out-of-bandregion is discussed. Additionally, a K/Ka-band frequency-reco